advanced power dual n-channel enhancement electronics corp. mode power mosfet low on-resistance bv dss 20v capable of 1.8v gate drive r ds(on) 18m optimal dc/dc battery application i d 6a halogen free & rohs compliant product description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 125 /w data and specifications subject to change without notice continuous drain current 3 halogen-free product 1 6 201210121 drain-source voltage 20 gate-source voltage + 8 AP9938GEO-HF parameter rating storage temperature range continuous drain current 3 4.8 pulsed drain current 1 20 total power dissipation 1 -55 to 150 parameter operating junction temperature range -55 to 150 thermal data s1 g1 d1 s2 g2 d2 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. d2 s2 s2 g2 d1 s1 s1 g1 tssop-8
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =6a - - 18 m v gs =2.5v, i d =4a - - 24 m v gs =1.8v, i d =2a - - 28 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.3 - 1 v g fs forward transconductance v ds =5v, i d =6a - 28 - s i dss drain-source leakage current v ds =16v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 8v, v ds =0v - - + 30 ua q g total gate charge i d =6a - 16 26 nc q gs gate-source charge v ds =10v - 1.6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.3 - nc t d(on) turn-on delay time v ds =10v - 7 - ns t r rise time i d =1a - 11 - ns t d(off) turn-off delay time r g =3.3 -31- ns t f fall time v gs =5v - 6 - ns c iss input capacitance v gs =0v - 1070 1710 pf c oss output capacitance v ds =10v - 130 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 1.4 2.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time i s =6a, v gs =0 v , - 14 - ns q rr reverse recovery charge di/dt=100a/s - 4 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 208 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP9938GEO-HF
a p9938geo-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 4 8 12 16 20 24 011223 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 5.0v 4.5v 3.5v 2.5v v g =1.8v 0 4 8 12 16 20 012345 v ds , drain-to-source voltage (v) i d , drain current (a) 5.0v 4.5v 3.5v 2.5v v g =1.8v t a = 150 o c 14 16 18 20 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v g = 4.5 v 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) i d =250ua
AP9938GEO-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 4 0 1 2 3 4 5 6 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =10v i d =6a 50 250 450 650 850 1050 1250 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =208 /w t t single pulse 0.01 0.02 0.05 0.1 0.2 duty factor=0.5 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 30 40 0123 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v operation in this area limited by r ds(on) t j =-40 o c 0 1 2 3 4 5 6 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a)
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